A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application April 21, 2023 - Shusuke Kawai, Takeshi Ueno, Hiroaki Ishihara, Satoshi Takaya, Koutaro Miyazaki, Kohei Onizuka, and Hiroki Ishikuro , “An Active Slew Rate…
An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs April 2, 2023 - Shusuke Kawai, Takeshi Ueno, Hiroki Ishikuro, and Kohei Onizuka , “An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time…
Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting April 2, 2023 - Yi Tan, Yohsuke Shiiki, and Hiroki Ishikuro, "Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting", IEEE Transactions…
T/R Switch Composed of Three HV-MOSFETs With 12.1-μW Consumption That Enables Per-Channel Self-Loopback AC Tests and −18.1-dB Switching Noise Suppression for 3-D Ultrasound Imaging With 3072-Ch Transceiver February 12, 2022 - Shinya Kajiyama, Yutaka Igarashi, Toru Yazaki, Yusaku Katsube, Takuma Nishimoto, Tatsuo Nakagawa, Yohei Nakamura, Yoshihiro Hayashi, Takuya Kaneko, Hiroki Ishikuro,…
Simulation and Calibration of Op-Amp Nonidealities in the Voltage Feedback Method for a Cross-Point Resistive Sensor Array November 6, 2021 - Yohsuke Shiiki and Hiroki Ishikuro, “Simulation and Calibration of Op-Amp Nonidealities in the Voltage Feedback Method for a Cross-Point Resistive…
Low-Power and ppm-Level Multimolecule Detection by Integration of Self-Heated Metal Nanosheet Sensors November 6, 2021 - T. Tanaka, K. Tabuchi, K. Tatehora, Y. Shiiki, S. Nakagawa T. Takahasi, Ryota Shimizu, H. Ishikuro, T. Kuroda, T. Yanagida,…
Digital Amplifier: A Power-Efficient and Process-Scaling Amplifier for Switched Capacitor Circuits November 6, 2021 - Kentaro Yoshioka, Tomohiko Sugimoto, Naoya Waki, Sinnyoung Kim, Daisuke Kurose, Hirotomo Ishii, Masanori Furuta, Akihide Sai, Hiroki Ishikuro, and Tetsuro…
A Near-Optimum 13.56 MHz CMOS Active Rectifier with Circuit-Delay Real-Time Calibrations for High-Current Biomedical Implants November 6, 2021 - C. Huang, T. Kawajiri, and H. Ishikuro, “A Near-Optimum 13.56 MHz CMOS Active Rectifier with Circuit-Delay Real-Time Calibrations for High-Current…
A 24 mW 5.7 Gbps Dual Frequency Conversion Demodulator for Impulse Radio with the First Sidelobe November 6, 2021 - Kaoru Kohira, Naoki Kitazawa, and Hiroki Ishikuro, “A 24 mW 5.7 Gbps Dual Frequency Conversion Demodulator for Impulse Radio with…
A 12.5Gbps CDR with Differential to Common Converting Edge Detector for the Wired and Wireless Serial Link November 6, 2021 - Kaoru Kohira and Hiroki Ishikuro, “A 12.5Gbps CDR with Differential to Common Converting Edge Detector for the Wired and Wireless…
A 280 Mb/s In-Vehicle LAN System Using Electromagnetic Clip Connector and High-EMC Transceiver November 6, 2021 - Atsutake Kosuge, Akira Okada, Masao Taguchi, Hiroki Ishikuro, and Tadahiro Kuroda, “A 280 Mb/s In-Vehicle LAN System Using Electromagnetic Clip…
A 13.56-MHz Wireless Power Transfer System With Enhanced Load-Transient Response and Efficiency by Fully Integrated Wireless Constant-Idle-Time Control for Biomedical Implants April 3, 2017 - Cheng Huang, Toru Kawajiri an...
1-W 3.3?16.3-V Boosting Wireless Power Transfer Circuits With Vector Summing Power Controller , April 3, 2012 - K. Tomita, R. Shinoda, T. Kuro...
High-Frequency Precise Characterization of Intrinsic FinFET, April 3, 2012 - H. Sakai, S. Ouchi, T. Matsuka...
A 0.5V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS, April 3, 2012 - A. Shikata, S. Ouchi, T. Kurod...
47% Power Reduction and 91% Area Reduction in Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking, April 3, 2010 - M. Saito, Y. Yoshida, N. Miura...
Modeling and Experimental Verification of Misalignment Tolerance in Inductive-Coupling Inter-Chip Link for Low-Power 3-D System Integration, April 3, 2010 - K.Niitsu, Y. Kohama, Y. Sugimo...
2 Gb/s 15 pJ/b/chip Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking, April 3, 2010 - M. Saito, Y. Sugimori, Y. Koha...
Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transistor April 3, 2010 - Large Electron Addition Energy...
Wireless proximity interfaces with a pulse-based inductive coupling technique, April 3, 2010 - H.Ishikuro, T.Kuroda, "Wireles...
A 750 Mb/s, 12 pJ/b, 6-to-10 GHz CMOS IR-UWB Transmitter With Embedded On-Chip Antenna, April 3, 2009 - V.V.Kulkarni, M.Muqsith, N. Ni...
A High-Speed Inductive-Coupling Link With Burst Transmission, April 3, 2009 - N. Miura, Y. Kohama, Y. Sugimo...
A 0.14 pJ/b Inductive-Coupling Transceiver With Digitally-Controlled Precise Pulse Shaping, April 3, 2008 - N. Miura, H. Ishikuro, K.Niits...
An Outside-Rail Opamp Design Relaxing Low-Voltage Constraint on Future Scaled Transistors, April 3, 2005 - K.Ishida, A.Tamtrakarn, H.Ishi...
60% Power Reduction in Inductive-Coupling Inter-Chip Link by Current-Sensing Technique, April 3, 2005 - K. Niitsu, N. Miura, M. Inoue,...
A 2.4-GHz Temperature compensated CMOS LC-VCO for Low Frequency Drift Low-Power Direct-Modulation GFSK Transmitter April 3, 2005 - A 2.4-GHz Temperature compensa...
A Full-CMOS Single Chip Bluetooth LSI with 1.5MHz-IF Receiver and Direct Modulation Transmitter April 3, 2004 - A Full-CMOS Single Chip Blueto...
Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs April 3, 2000 - Experimental Evidence for Quan...
Effects of interface traps in silicon-quantum-dots-based memory structures April 3, 2000 - Effects of interface traps in ...
Impact of the Device Scaling on the Low-Frequency Noise in n-MOSFETs April 3, 2000 - Impact of the Device Scaling o...
Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels April 3, 2000 - Random telegraph signals and l...
Control of Coulomb blockade oscillations in silicon single electron transistor using silicon nano-crystal floating gates April 3, 2000 - Control of Coulomb blockade os...
Quantum Energy and Charging Energy in Point Contact MOSFETs acting as Single Electron Transistors April 3, 1999 - Quantum Energy and Charging En...
Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect-Transistor Memories with Silicon Nanocrystal Floating Gates April 3, 1999 - Characteristic Distributions o...
Coulomb Blockade in VLSI-Compatible Multiple-Dot and Single-Dot MOSFETs April 3, 1999 - Coulomb Blockade in VLSI-Compa...
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs April 3, 1999 - Measurement of Energetic and L...
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals April 3, 1999 - Characteristics of Narrow Chan...
On the origin of tunneling barriers in silicon single electron and single hole transistors April 3, 1999 - On the origin of tunneling bar...
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes April 3, 1999 - Effects of Interface Traps on ...
Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule April 3, 1999 - Fabrication of Nano-Scale Poin...
Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals April 3, 1998 - Effects of traps on charge sto...
Hopping Transport in Multiple-Dot Silicon Single Electron MOSFET, Solid State Electronics April 3, 1998 - Hopping Transport in Multiple-...
Fabrication of Gate-All Around MOSFET by Silicon Anisotropic Etching Technique April 3, 1998 - Fabrication of Gate-All Around...
Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET April 3, 1998 - Suppression of Geometric Compo...
Highly Integrated Single Electron Devices and Giga-bit Lithography June 1, 1997 - Highly Integrated Single Elect...
Quantum mechanical effects in the silicon quantum dot in a single-electron-transistor April 3, 1997 - Quantum mechanical effects in ...
Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET April 3, 1997 - Room Temperature Coulomb Block...
Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates April 3, 1996 - Characterization of Precisely ...
Fabirication of Si Nano-Structures for Single Electron Device Applications by Anisotropic Etching April 3, 1996 - Fabirication of Si Nano-Struct...
Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire Metal-Oxide-Semiconductor Field-Effect-Transistor Fabricated by Anisotropic Etching on a Silicon-on-Insulator Substrate April 3, 1996 - Coulomb Blockade Oscillations ...