Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire Metal-Oxide-Semiconductor Field-Effect-Transistor Fabricated by Anisotropic Etching on a Silicon-on-Insulator Substrate ; H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma ; Applied Physics Letters ; ; ; V.68/No.25/P.3585 – 3587 ; 1996/06?
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