H. Sakai, S. Ouchi, T. Matsukawa, K. Kasuga, K. Endo, Y. Liu, J. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K.Sakamoto, M. Masahara, H. Ishikuro "High-Frequency Precise Characterization of Intrinsic FinFET," IEEE Transactions on Electronics, Vol. E95-C , No. 4, pp. 752 – 760, Apl., 2012.
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