Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect-Transistor Memories with Silicon Nanocrystal Floating Gates ; Eiji Nagata, Nobuyoshi Takahashi, Yuri Yasuda, Takashi Inukai, Hiroki Ishikuro, and Toshiro Hiramoto ; Japanese Journal of Applied Physics ; ; ; V.38/No.12B/P.7230 – 7232 ; 1999/12?
同様の投稿
松浦正詩がAPMC2023でBest Student Paper Awardを受賞しました
3月 1, 2024A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration
3月 1, 2024K. Yamashita, B. Hershberg, K. Yoshioka and H. Ishikuro, “A 4.6–400 K Functional Ringamp-Based 250 MS/s […]
Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor DC–DC Converter for Optimum Efficiency and Transient Speed in Wide Loading Range for IoT Application
3月 1, 2024Y. Tan, C. Huang and H. Ishikuro, “Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor D […]
コメントはまだありません