A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration 3月 1, 2024 - K. Yamashita, B. Her…
Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor DC–DC Converter for Optimum Efficiency and Transient Speed in Wide Loading Range for IoT Application 3月 1, 2024 - Y. Tan, C. Huang and…
A Cryogenic 12 GHz Frequency Doubler With Temperature Compensation for Trapped-Ion Quantum Computer 3月 1, 2024 - P. Toth, A. Meyer, S…
Accurate Sneak-Path-Controlled Readout for a Cross-Point Resistive Sensor Array 3月 1, 2024 - Y. Shiiki and H. Ish…
A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application 3月 1, 2024 - S. Kawai et al., "A …
An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs 3月 1, 2024 - S. Kawai, T. Ueno, H…
A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application 4月 21, 2023 - Shusuke Kawai, Takes…
An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs 4月 2, 2023 - Shusuke Kawai, Takes…
Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting 4月 2, 2023 - Yi Tan, Yohsuke Shii…
T/R Switch Composed of Three HV-MOSFETs With 12.1-μW Consumption That Enables Per-Channel Self-Loopback AC Tests and −18.1-dB Switching Noise Suppression for 3-D Ultrasound Imaging With 3072-Ch Transceiver 2月 12, 2022 - Shinya Kajiyama, Yut…
Simulation and Calibration of Op-Amp Nonidealities in the Voltage Feedback Method for a Cross-Point Resistive Sensor Array 11月 6, 2021 - Yohsuke Shiiki and H…
Low-Power and ppm-Level Multimolecule Detection by Integration of Self-Heated Metal Nanosheet Sensors 11月 6, 2021 - T. Tanaka, K. Tabuch…
A Power-Efficient and Process-Scaling Amplifier for Switched Capacitor Circuits 11月 6, 2021 - Kentaro Yoshioka, To…
A Near-Optimum 13.56 MHz CMOS Active Rectifier with Circuit-Delay Real-Time Calibrations for High-Current Biomedical Implants 11月 6, 2021 - C. Huang, T. Kawajir…
A 24 mW 5.7 Gbps Dual Frequency Conversion Demodulator for Impulse Radio with the First Sidelobe 11月 6, 2021 - Kaoru Kohira, Naoki …
A 12.5Gbps CDR with Differential to Common Converting Edge Detector for the Wired and Wireless Serial Link 11月 6, 2021 - Kaoru Kohira and Hir…
A 280 Mb/s In-Vehicle LAN System Using Electromagnetic Clip Connector and High-EMC Transceiver 11月 6, 2021 - Atsutake Kosuge, Aki…
A 13.56-MHz Wireless Power Transfer System With Enhanced Load-Transient Response and Efficiency by Fully Integrated Wireless Constant-Idle-Time Control for Biomedical Implants 4月 3, 2017 - Cheng Huang, Toru Ka…
1-W 3.3?16.3-V Boosting Wireless Power Transfer Circuits With Vector Summing Power Controller , 4月 3, 2012 - K. Tomita, R. Shinod…
A 0.5V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS, 4月 3, 2012 - A. Shikata, S. Ouchi…
Wireless proximity interfaces with a pulse-based inductive coupling technique, 4月 3, 2010 - H.Ishikuro, T.Kuroda…
Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transistor 4月 3, 2010 - Large Electron Addit…
47% Power Reduction and 91% Area Reduction in Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking, 4月 3, 2010 - M. Saito, Y. Yoshida…
Modeling and Experimental Verification of Misalignment Tolerance in Inductive-Coupling Inter-Chip Link for Low-Power 3-D System Integration, 4月 3, 2010 - K.Niitsu, Y. Kohama,…
2 Gb/s 15 pJ/b/chip Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking, 4月 3, 2010 - M. Saito, Y. Sugimor…
A 750 Mb/s, 12 pJ/b, 6-to-10 GHz CMOS IR-UWB Transmitter With Embedded On-Chip Antenna, 4月 3, 2009 - V.V.Kulkarni, M.Muqs…
A 0.14 pJ/b Inductive-Coupling Transceiver With Digitally-Controlled Precise Pulse Shaping, 4月 3, 2008 - N. Miura, H. Ishikur…
An Outside-Rail Opamp Design Relaxing Low-Voltage Constraint on Future Scaled Transistors, 4月 3, 2005 - K.Ishida, A.Tamtraka…
60% Power Reduction in Inductive-Coupling Inter-Chip Link by Current-Sensing Technique, 4月 3, 2005 - K. Niitsu, N. Miura,…
A 2.4-GHz Temperature compensated CMOS LC-VCO for Low Frequency Drift Low-Power Direct-Modulation GFSK Transmitter 4月 3, 2005 - A 2.4-GHz Temperatur…
A Full-CMOS Single Chip Bluetooth LSI with 1.5MHz-IF Receiver and Direct Modulation Transmitter 4月 3, 2004 - A Full-CMOS Single C…
Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs 4月 3, 2000 - Experimental Evidenc…
Effects of interface traps in silicon-quantum-dots-based memory structures 4月 3, 2000 - Effects of interface…
Impact of the Device Scaling on the Low-Frequency Noise in n-MOSFETs 4月 3, 2000 - Impact of the Device…
Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels 4月 3, 2000 - Random telegraph sig…
Control of Coulomb blockade oscillations in silicon single electron transistor using silicon nano-crystal floating gates 4月 3, 2000 - Control of Coulomb b…
Highly Integrated Single Electron Devices and Giga-bit Lithography 4月 3, 1999 - Highly Integrated Si…
Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect-Transistor Memories with Silicon Nanocrystal Floating Gates 4月 3, 1999 - Characteristic Distr…
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals 4月 3, 1999 - Characteristics of N…
Coulomb Blockade in VLSI-Compatible Multiple-Dot and Single-Dot MOSFETs 4月 3, 1999 - Coulomb Blockade in …
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes 4月 3, 1999 - Effects of Interface…
Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule 4月 3, 1999 - Fabrication of Nano-…
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs 4月 3, 1999 - Measurement of Energ…
On the origin of tunneling barriers in silicon single electron and single hole transistors 4月 3, 1999 - On the origin of tun…
Quantum Energy and Charging Energy in Point Contact MOSFETs acting as Single Electron Transistors 4月 3, 1999 - Quantum Energy and C…
Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET 4月 3, 1998 - Suppression of Geome…
Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals 4月 3, 1998 - Effects of traps on …
Fabrication of Gate-All Around MOSFET by Silicon Anisotropic Etching Technique 4月 3, 1998 - Fabrication of Gate-…
Hopping Transport in Multiple-Dot Silicon Single Electron MOSFET, Solid State Electronics 4月 3, 1998 - Hopping Transport in…
Quantum mechanical effects in the silicon quantum dot in a single-electron-transistor 4月 3, 1997 - Quantum mechanical e…
Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET 4月 3, 1997 - Room Temperature Cou…
Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates 4月 3, 1996 - Characterization of …
Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire Metal-Oxide-Semiconductor Field-Effect-Transistor Fabricated by Anisotropic Etching on a Silicon-on-Insulator Substrate 4月 3, 1996 - Coulomb Blockade Osc…
Fabirication of Si Nano-Structures for Single Electron Device Applications by Anisotropic Etching 4月 3, 1996 - Fabirication of Si N…