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In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current

In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current

Masayuki Ichikawa, Takahisa Tanaka, Ken Uchida, Tomohisa Miyao, Munehiro Tada, and Hiroki Ishikuro, “In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current” presented at 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, 04-06 July 2022

Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors

Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors

Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, and Ken Uchida, “Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors” presented at 2022 Device Research Conference (DRC), Columbus, OH, USA, 26-29 June 2022