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Enhanced Drain Current in Transient Mode...

Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors

Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, and Ken Uchida, “Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors” presented at 2022 Device Research Conference (DRC), Columbus, OH, USA, 26-29 June 2022

Robust Readout Circuit with Leakage Curr...

Robust Readout Circuit with Leakage Current Cancellation Technique for Stretchable Touch Sensors

Kaoru Yamashita, Tokihiko Shimura, Shun Sato, Naoji Matsuhisa, and Hiroki Ishikuro, “Robust Readout Circuit with Leakage Current Cancellation Technique for Stretchable Touch Sensors” presented at 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Dubai, United Arab Emirates, 28 November 2021 – 01 December 2021