Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov, “13.3 A Cryo-BiCMOS Controller for 9Be+-Trapped-Ion-Based Quantum Computers,” 2025 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, 2025.
K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.6-373K Functional 800MS/s 12b Buffer-then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC with Integrated-Active-Hold Technique,” 2025 IEEE Custom Integrated Circuits Conference (CICC), Boston, MA, USA, 2025.
K. Yamashita, B. Hershberg, K. Yoshioka and H. Ishikuro, “A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration,” in IEEE Journal of Solid-State Circuits, vol. 59, no. 3, pp. 740-752, March 2024
Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov, “A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions,” in IEEE Journal of Solid-State Circuits, 2024.
K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.2–373 K Functional 800-MS/s 12-b Buffer-Then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC With Integrated Active-Hold Technique,” in IEEE Journal of Solid-State Circuits, 2025.
Yi Tan, Hiroki Ishikuro, “A Dual-Mode 2:1 Switched Capacitor Converter with >65% Efficiency over 1000x Load Current Range and One Clock Cycle Transient Response” presented at 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Glasgow, United Kingdom, 24-26 October 2022
Masayuki Ichikawa, Takahisa Tanaka, Ken Uchida, Tomohisa Miyao, Munehiro Tada, and Hiroki Ishikuro, “In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current” presented at 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, 04-06 July 2022
Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, and Ken Uchida, “Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors” presented at 2022 Device Research Conference (DRC), Columbus, OH, USA, 26-29 June 2022
Kaoru Yamashita, Tokihiko Shimura, Shun Sato, Naoji Matsuhisa, and Hiroki Ishikuro, “Robust Readout Circuit with Leakage Current Cancellation Technique for Stretchable Touch Sensors” presented at 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Dubai, United Arab Emirates, 28 November 2021 – 01 December 2021
