A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration
K. Yamashita, B. Hershberg, K. Yoshioka and H. Ishikuro, “A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration,” in IEEE Journal of Solid-State Circuits, vol. 59, no. 3, pp. 740-752, March 2024
A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions
Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov, “A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions,” in IEEE Journal of Solid-State Circuits, 2024.
A 4.2–373 K Functional 800-MS/s 12-b Buffer-Then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC With Integrated Active-Hold Technique
K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.2–373 K Functional 800-MS/s 12-b Buffer-Then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC With Integrated Active-Hold Technique,” in IEEE Journal of Solid-State Circuits, 2025.
Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor DC–DC Converter for Optimum Efficiency and Transient Speed in Wide Loading Range for IoT Application
Y. Tan, C. Huang and H. Ishikuro, “Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor DC–DC Converter for Optimum Efficiency and Transient Speed in Wide Loading Range for IoT Application,” in IEEE Journal of Solid-State Circuits
Kaoru Yamashita received the Outstanding Student Paper Award at CICC2023
A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application
Shusuke Kawai, Takeshi Ueno, Hiroaki Ishihara, Satoshi Takaya, Koutaro Miyazaki, Kohei Onizuka, and Hiroki Ishikuro , “An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs”, IEEE Transactions on Power Electronics, Vol. 38, pp. 7079 – 7091, 13 February 2023
An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs
Shusuke Kawai, Takeshi Ueno, Hiroki Ishikuro, and Kohei Onizuka , “An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs”, IEEE Journal of Solid-State Circuits, Vol. 58, pp. 428 – 438, 2 February 2023
Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting
Yi Tan, Yohsuke Shiiki, and Hiroki Ishikuro, “Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 30, pp. 463 – 473, 4 April 2022
T/R Switch Composed of Three HV-MOSFETs With 12.1-μW Consumption That Enables Per-Channel Self-Loopback AC Tests and −18.1-dB Switching Noise Suppression for 3-D Ultrasound Imaging With 3072-Ch Transceiver
Shinya Kajiyama, Yutaka Igarashi, Toru Yazaki, Yusaku Katsube, Takuma Nishimoto, Tatsuo Nakagawa, Yohei Nakamura, Yoshihiro Hayashi, Takuya Kaneko, Hiroki Ishikuro, and Taizo Yamawaki, “T/R Switch Composed of Three HV-MOSFETs With 12.1-μW Consumption That Enables Per-Channel Self-Loopback AC Tests and −18.1-dB Switching Noise Suppression for 3-D Ultrasound Imaging With 3072-Ch Transceiver,” IEEE Transactions on Very Large […]
