Dr. Huang from Iowa State University had stayed Ishikuro Lab for 3 weeks, and it’s time to go back to the US.So we organize farewell party.
Farewell Party with Dr. Huang
Social gathering with OB Chen
We organize social gathering with Mr. Chen, OB for laboratry.
Kaoru Yamashita received the Outstanding Student Paper Award at CICC2023
A Load Adaptive Digital Gate Driver IC With Integrated 500 ksps ADC for Drive Pattern Selection and Functional Safety Targeting Dependable SiC Application
Shusuke Kawai, Takeshi Ueno, Hiroaki Ishihara, Satoshi Takaya, Koutaro Miyazaki, Kohei Onizuka, and Hiroki Ishikuro , “An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs”, IEEE Transactions on Power Electronics, Vol. 38, pp. 7079 – 7091, 13 February 2023
An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs
Shusuke Kawai, Takeshi Ueno, Hiroki Ishikuro, and Kohei Onizuka , “An Active Slew Rate Control Gate Driver IC With Robust Discrete-Time Feedback Technique for 600-V Superjunction MOSFETs”, IEEE Journal of Solid-State Circuits, Vol. 58, pp. 428 – 438, 2 February 2023
A Dual-Mode 2:1 Switched Capacitor Converter with >65% Efficiency over 1000x Load Current Range and One Clock Cycle Transient Response
Yi Tan, Hiroki Ishikuro, “A Dual-Mode 2:1 Switched Capacitor Converter with >65% Efficiency over 1000x Load Current Range and One Clock Cycle Transient Response” presented at 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Glasgow, United Kingdom, 24-26 October 2022
In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current
Masayuki Ichikawa, Takahisa Tanaka, Ken Uchida, Tomohisa Miyao, Munehiro Tada, and Hiroki Ishikuro, “In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current” presented at 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, 04-06 July 2022
Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors
Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, and Ken Uchida, “Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors” presented at 2022 Device Research Conference (DRC), Columbus, OH, USA, 26-29 June 2022
Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting
Yi Tan, Yohsuke Shiiki, and Hiroki Ishikuro, “Optimization of Gate Voltage in Capacitive DC–DC Converters for Thermoelectric Energy Harvesting”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 30, pp. 463 – 473, 4 April 2022
Robust Readout Circuit with Leakage Current Cancellation Technique for Stretchable Touch Sensors
Kaoru Yamashita, Tokihiko Shimura, Shun Sato, Naoji Matsuhisa, and Hiroki Ishikuro, “Robust Readout Circuit with Leakage Current Cancellation Technique for Stretchable Touch Sensors” presented at 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Dubai, United Arab Emirates, 28 November 2021 – 01 December 2021