1.5MHz-IF受信方式および直接変調送信方式によるシング…
1.5MHz-IF受信方式および直接変調送信方式によるシングルチップCMOS Bluetoothトランシーバ
Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transitor
Large Electron Addition Energy…
Threshold Voltage Increase by Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs
Threshold Voltage Increase by …
A Directional Current Switch Using Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots
A Directional Current Switch U…
Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots
Characteristics of Silicon Sin…
Characteristics Distribution of Narrow Channel MOSFET Memories with Silicon Nano-Crystal Floating Gates
Characteristics Distribution o…
Threshold Voltage Shift in Ultra-Narrow MOSFETs by Quantum Mechanical Narrow Channel Effect
Threshold Voltage Shift in Ult…
Random Telegraph Signals in Very Narrow Channel MOSFET
Random Telegraph Signals in Ve…
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes
Effects of Interface Traps on …
Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors
Influence of Quantum Confineme…