Fabrication of Nano-Scale Poin…
Fabrication of Nano-Scale Point Contact MOSFETs Using Micrometer-Scale Design Rule
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes
Effects of Interface Traps on …
Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors
Influence of Quantum Confineme…
Effects of Body Reverse Pulse Bias on Geometric Component of Charge Pumping Current in FD SOI MOSFETs
Effects of Body Reverse Pulse …
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
Measurement of Energetic and L…
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
Characteristics of Narrow Chan…
The Origin of Tunnel Barrier in Silicon Single Electron Transistor, International Conference on Physics of Semiconductors (ICPS)
The Origin of Tunnel Barrier i…
Energy Spectrum of the Quantum-Dot in a Si Single-Electron-Device
Energy Spectrum of the Quantum…
Narrow Channel MOS Memory Based on Silicon Nano-Crystals
Narrow Channel MOS Memory Base…
Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature
Fabrication of Si Point Contac…