Characterization of Precisely …
Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates
Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire Metal-Oxide-Semiconductor Field-Effect-Transistor Fabricated by Anisotropic Etching on a Silicon-on-Insulator Substrate
Coulomb Blockade Oscillations …
Fabirication of Si Nano-Structures for Single Electron Device Applications by Anisotropic Etching
Fabirication of Si Nano-Struct…