Effects of Interface Traps on …
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes
Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET
Suppression of Geometric Compo…
Hopping Transport in Multiple-Dot Silicon Single Electron MOSFET, Solid State Electronics
Hopping Transport in Multiple-…
Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors
Influence of Quantum Confineme…
Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature
Fabrication of Si Point Contac…
Quantum mechanical effects in the silicon quantum dot in a single-electron-transistor
Quantum mechanical effects in …
Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET
Room Temperature Coulomb Block…
Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates
Characterization of Precisely …
Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire Metal-Oxide-Semiconductor Field-Effect-Transistor Fabricated by Anisotropic Etching on a Silicon-on-Insulator Substrate
Coulomb Blockade Oscillations …
Fabirication of Si Nano-Structures for Single Electron Device Applications by Anisotropic Etching
Fabirication of Si Nano-Struct…