Hideo Sakai, Shin-ichi O’uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara and Hiroki Ishikuro, "1/f Noise Characteristic in Independent-Double-Gate-FinFET" at 2012 International Conference on. Solid State Devices and Materials (SSDM 2012), Kyoto, Japan, Sept. 26, 2012.
同様の投稿
13.3 A Cryo-BiCMOS Controller for 9Be+-Trapped-Ion-Based Quantum Computers
1月 12, 2026Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Hiroki Ishikuro, Christian […]
A 4.6-373K Functional 800MS/s 12b Buffer-then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC with Integrated-Active-Hold Technique
1月 12, 2026K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.6-373K Functional 800MS/s 12b Bu […]
A 4.2–373 K Functional 800-MS/s 12-b Buffer-Then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC With Integrated Active-Hold Technique
1月 12, 2026K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.2–373 K Functional 800-MS/s 12-b […]
コメントはまだありません