Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature ; Hiroki Ishikuro and Toshiro Hiramoto ; Silicon Nanoelectronics Workshop ; ; Kyoto, Japan ; ; 1997/06?
同様の投稿
松浦正詩がAPMC2023でBest Student Paper Awardを受賞しました
3月 1, 2024A Reader System with Single-Step Self-Jamming Cancellation for 0.86mm² Passive RFID Tags with an On-chip Antenna
3月 1, 2024M. Matsuura and H. Ishikuro, “A Reader System with Single-Step Self-Jamming Cancellation for 0.86mm² Pas […]
An Oscillator with Inductively Coupled Resonators for Readout of Stretchable Resistive Strain Sensor
3月 1, 2024B. Mårtensson, H. Mitomo, B. Behmanesh, N. Matsuhisa and H. Ishikuro, “An Oscillator with Inductively Co […]
コメントはまだありません