Effects of interface traps in silicon-quantum-dots-based memory structures ; X. L. Yuan, Y. Shi, S. L. Gu, J. M. Zhu, Y. D. Zheng, K. Saito, H. Ishikuro, and T. Hiramoto ; Physica E ; ; ; V.8/No.2/P.189-193 ; 2000/08?
同様の投稿
A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b Pipelined ADC With PVT-Robust Unity-Gain-Frequency-Aware Bias Calibration
1月 12, 2026K. Yamashita, B. Hershberg, K. Yoshioka and H. Ishikuro, “A 4.6–400 K Functional Ringamp-Based 250 MS/s 12 b P […]
A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions
1月 12, 2026Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bo […]
A 4.2–373 K Functional 800-MS/s 12-b Buffer-Then-Amplify Charge-Pump-Based Pipelined TI-SAR ADC With Integrated Active-Hold Technique
1月 12, 2026K. Yamashita, K. Yoshioka, C. Ziegler, V. Issakov and H. Ishikuro, “A 4.2–373 K Functional 800-MS/s 12-b […]
コメントはまだありません